Quick-freezing alloy accelerates phase-change memory

Interfacial phase-change memory.

Phase-change memory technology relies on the electrical and optical properties of certain materials changing substantially when the atomic structure of the material is altered by heating or some other excitation process. For example, switching the composite Ge(2)Sb(2)Te(5) (GST) alloy from its covalently bonded amorphous phase to its resonantly bonded metastable cubic crystalline phase decrease...

Pressure tunes electrical resistivity by four orders of magnitude in amorphous Ge2Sb2Te5 phase-change memory alloy.

Ge-Sb-Te-based phase-change memory is one of the most promising candidates to succeed the current flash memories. The application of phase-change materials for data storage and memory devices takes advantage of the fast phase transition (on the order of nanoseconds) and the large property contrasts (e.g., several orders of magnitude difference in electrical resistivity) between the amorphous an...

Sharp Phase Change in Shape Memory Alloy Thermal Actuators for Subsea Flow Control

Gas-lifted oil wells are susceptible to failure through malfunction of gas lift valves (GLV). One failure mode occurs when the GLV check valve fails and product passes into the well annulus, potentially reaching the wellhead. This is a growing concern as offshore wells are drilled thousands of meters below the ocean floor in extreme temperature and pressure conditions and repair and monitoring ...

Comment on "Formation of large voids in the amorphous phase-change memory Ge2Sb2Te5 alloy".

Projected phase-change memory devices

Nanoscale memory devices, whose resistance depends on the history of the electric signals applied, could become critical building blocks in new computing paradigms, such as brain-inspired computing and memcomputing. However, there are key challenges to overcome, such as the high programming power required, noise and resistance drift. Here, to address these, we present the concept of a projected...